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HiPerFET TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
IXFH 32N50Q
IXFT 32N50Q
V DSS I D25 R DS(on)
500 V 32 A 0.16 ?
500 V 32 A 0.16 ?
t rr ≤ 250 ns
Avalanche Rated, Low Q g , High dv/dt
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXFH)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
500
500
V
V
V GS
V GSM
I D25
I DM
I AR
E AR
E AS
Continuous
Transient
T C = 25 ° C
T C = 25 ° C; pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
± 20
± 30
32
128
32
45
1500
V
V
A
A
A
mJ
mJ
TO-268 (D3) ( IXFT)
(TAB)
dv/dt
P D
T J
T JM
T stg
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
5
416
-55 ... + 150
150
-55 ... + 150
V/ns
W
° C
° C
° C
G = Gate
S = Source
G
S
D = Drain
TAB = Drain
(TAB)
T L
M d
1.6 mm (0.063 in) from case for 10 s
Mounting torque
300
1.13/10
° C
Nm/lb.in.
Weight
TO-247
TO-268
6
4
g
g
Features
IXYS advanced low Q g process
Low gate charge and capacitances
- easier to drive
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
- faster switching
International standard packages
Low R DS (on)
Unclamped Inductive Switching (UIS)
V DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0 V, I D = 250 uA
V DS = V GS , I D = 4 mA
V GS = ± 20 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
V GS = 10 V, I D = 0.5 I D25
Note 1
500
2.5
T J = 25 ° C
T J = 125 ° C
4.5
± 100
100
1
0.16
V
V
nA
μ A
mA
?
rated
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
Easy to mount
Space savings
High power density
? 2004 IXYS All rights reserved
DS98596E(02/04)
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